2.7-MU-M INGAASSB ALGAASSB LASER-DIODES WITH CONTINUOUS-WAVE OPERATION UP TO -39-DEGREES-C/

We have demonstrated continuous wave operation of 2.7-mu m InGaAsSb/Al GaAsSb multiquantum-well diode lasers up to a temperature of 234 K (-3 9 degrees C). These devices were grown by molecular-beam-epitaxy. They have a tendency to operate in a dominant single mode over well-define d temperature and current intervals. A comparison of spontaneous emiss ion spectra shows that above threshold, the quasi-Fermi level is pinne d and that most of the carriers are injected into nonlasing states. Th is effect leads to a rapid decrease of differential efficiency with in creasing temperature. (C) 1995 American Institute of Physics.