HIGH CRYSTALLINE QUALITY ZNSE FILMS GROWN BY PULSED-LASER DEPOSITION

We have grown epitaxial ZnSe films on (001)GaAs substrates at 300 degr ees C by pulsed laser deposition (PLD). Before the growth, thin buffer layers of GaAs are also grown by PLD at 300 degrees C. While the patt ern of reflection high energy electron diffraction (RHEED) of the buff er layers is spotty, the pattern of the ZnSe films subsequently grown is streaky, and shows distinct Kikuchi lines and bands. The x-ray rock ing curve width of the films is as narrow as 150 arcsec. Photoluminesc ence (PL) at 10 K of the films shows free and bound excitons, donor-ac ceptor pairs (DAP), and is free of any deep level emissions, indicatin g good crystalline quality of the films. Scanning electron microscopy (SEM) shows that the particulate number density of the films is only a bout 1 particulate per 400 mu m(2). (C) 1995 American Institute of Phy sics.