THE EFFECT OF STRAIN ON THE INTERDIFFUSION IN INGAAS GAAS QUANTUM-WELLS/

The effect of strain on the cation interdiffusion in InGaAs/GaAs quant um wells is described. It is found that the Fick's diffusion equation does not properly describe the interdiffusion in the heterostructure w ith strained layers. It is believed that the strain changes crystal de fect concentration and thus diffusivity is influenced by strain. Diffu sion equation including the strain effect is formulated and solved num erically. The experimental photoluminescence peak shifts as a function of annealing time are well-fitted by this analysis and useful paramet ers such as diffusivity describing InGaAs/GaAs quantum well interdiffu sion are extracted. (C) 1995 American Institute of Physics.