CLEAN GAP(001)-(4X2) AND H2S-TREATED (1X2)S SURFACE-STRUCTURES STUDIED BY SCANNING-TUNNELING-MICROSCOPY

Authors
SANADA N SHIMONMURA M FUKUDA Y SATO T
Citation
N. Sanada et al., CLEAN GAP(001)-(4X2) AND H2S-TREATED (1X2)S SURFACE-STRUCTURES STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 67(10), 1995, pp. 1432-1434
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
10
Year of publication
1995
Pages
1432 - 1434
Database
ISI
SICI code
0003-6951(1995)67:10<1432:CGAH(S>2.0.ZU;2-7
Abstract
Clean GaP(001)-(4x2) and H2S-treated (1X2) surfaces are studied by sca nning tunneling microscopy (STM). We have observed a (4X2)/c(8X2) STM image for the cation-stabilized GaP(001) surface. The result suggests that the unit cell of the (4X2) structure consists of two Ga dimers wi th two missing Ga dimers. For the (1x2)S surface, the previous model t hat sulfur atoms are adsorbed on the Ga dimer and that a missing row o f sulfur is formed along the [1 ($) over bar 10] direction is supporte d by the STM result. (C) 1995 American Institute of Physics.