Large arrays of Au nanowires down to 50 nm in width are fabricated on
V-grooved InP substrates. Holographic laser interference exposure of p
hotoresist and anisotropic etching are used to pattern the surface of
InP(001) substrates into V-shaped grooves with a 200 nm period. Next,
the patterned substrates are covered with a thin Au film, which is sub
sequently structured into nanowires using a well controlled wet etchin
g process. Initial characterization confirms that the wires are electr
ically continuous. (C) 1995 American Institute of Physics.