The excitation and decay mechanisms of the Yb3+ 4f-4f intra-shell emis
sion in InP and InAsP (4% and 7% of As) are analysed. Exciton binding
by Yb ion is discussed. The photoluminescence transient measurements i
ndicate that the Yb PL emission is deactivated at increased temperatur
e by energy back-transfer to band states of InP and InAsP.