POLARON EFFECTS ON THE IMPURITY BINDING-ENERGY IN QUANTUM WIRES

We report a calculation of the electron-phonon interaction effects on donor impurity binding energy in a semiconductor quantum wire of recta ngular cross section and finite barrier potential. The results for the binding energy are obtained as a function of the size of the wire for different positions of the impurity and for several values of the pot ential confining barrier height. It is found that the presence of phon ons changes significantly the values of the impurity binding energies of the system.