H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN

The effect of ion-implantation-induced damage on the resistivity of n- type GaN has been investigated. H, He, and N ions were studied. The re sistivity as a function of temperature, implant concentration, and pos t-implant annealing temperature has been examined. Helium implantation produced material with an as-implanted resistivity of 10(10) Omega-cm . He-implanted material remained highly resistive after an 800 degrees C furnace anneal. The damage associated with H implantation had a sig nificant anneal stage at 250 degrees C and the details of the as-impla nted resistivity were sample dependent. N implants had to be annealed at 400 degrees C to optimize the resulting resistivity but were then t hermally stable to over 800 degrees C. The 300 degrees C resistivity o f thermally stabilized He- and N-implanted layers was 10(4) Omega-cm, whereas for H-implanted layers the 300 degrees C resistivity was less than 10 Omega-cm. (C) 1995 American Institute of Physics.