LOW-TEMPERATURE CRYSTALLIZATION OF SPUTTERED CARBON-FILMS

Citation
Jm. Yanezlimon et al., LOW-TEMPERATURE CRYSTALLIZATION OF SPUTTERED CARBON-FILMS, Journal of applied physics, 78(5), 1995, pp. 3015-3019
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
5
Year of publication
1995
Pages
3015 - 3019
Database
ISI
SICI code
0021-8979(1995)78:5<3015:LCOSC>2.0.ZU;2-C
Abstract
The crystallization of amorphous carbon films, under inert atmospheres , occurs at annealing temperatures above 800 degrees C. In this work w e have found that when the annealing of carbon films is performed unde r atmospheric conditions, crystallization occurs at temperatures as lo w as 200 degrees C. The catalytic effect of oxygen in the crystallizat ion process is understood in terms of the generation of a porous struc ture in the carbon film due to the vaporization of carbon oxides. (C) 1995 American Institute of Physics.