HE ION RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS

The effects of He ion irradiation have been investigated in high elect ron mobility transistors. Heterojunctions have been also used to monit or the two-dimensional electron-gas degradation. Devices with differen t layer structures have been employed for the better understanding of failure mechanism sources. Finally, introduction of a charge control m odel allowed the determination of buffer layer degradation. (C) 1995 A merican Institute of Physics.