AN ISOTROPIC 2-BAND MODEL FOR HOT-ELECTRON TRANSPORT IN SILICON - INCLUDING ELECTRON-EMISSION PROBABILITY INTO SIO2

An isotropic two band model is proposed for electrons in silicon, that has the same density of states and magnitude of group velocity as tho se of the full band structure based on empirical pseudopotential, meth od calculations. The band model and transport parameters are calibrate d through extensive comparisons with Monte Carlo simulation results an d various experiments related to electron transport in silicon. Specif ically, the drift velocity, impact ionization coefficient, quantum yie ld, 2p core level line intensity and broadening from x-ray photoemissi on spectroscopy have all been used in calibration. Through the study o f electron emission at the Si/SiO2 interface in metal-oxide-semiconduc tor structures using the Monte Carlo method, it is demonstrated that t he model has good accuracy in modeling high field transport phenomena in silicon. (C) 1995 American Institute of Physics.