Ia. Buyanova et al., PHOTOLUMINESCENCE OF DEFECTS INDUCED IN SILICON BY SF6 O-2 REACTIVE-ION ETCHING/, Journal of applied physics, 78(5), 1995, pp. 3348-3352
Photoluminescence (PL) studies of SF6/O-2 plasma-induced defect format
ion in n-type silicon samples are reported. Ion bombardment of the sil
icon surface during the SF6 reactive-ion etching (RIE) is shown to int
roduce defects giving rise to a broad PL band in the 0.70-1.00 eV spec
tral range and to the carbon-related C and G lines. The role of oxygen
during SF6/O-2 RTE on the photoluminescence observed is analyzed. It
is argued that oxygen contamination enhances the formation of PL cente
rs via the creation of extended defects, such as oxygen precipitates.
A lattice contraction nearby these extended defects is suggested to be
responsible for the observed splitting of the C and G lines as well a
s the shift of the phosphorous bound exciton line detected after SF6/O
-2 RIE. (C) 1995 American Institute of Physics.