INTERDIFFUSION BEHAVIOR IN N-DOPED AND UNDOPED GAINAS ALGAINAS MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/

We present investigations on the interdiffusion behavior and thermal s tability of n-doped and undoped GaInAs/AlGaInAs multiple-quantum-well structures, grown lattice matched on InP by molecular-beam epitaxy. Th e activation energy of the main interdiffusion process is determined t o E(a)(n) (doped)=2.5 eV and E(a)(undoped)=2.9 eV. The different inter diffusion processes are monitored mainly by photoluminescence spectros copy at T=8 K after rapid thermal annealing of the samples. The influe nce of doping is studied by comparing the results of n-doped and undop ed structures. Additionally photoluminescence excitation spectroscopy at T=2 K was carried out to verify the different interdiffusion proces ses. (C) 1995 American Institute of Physics.