In this paper, the electronic properties of localized states in wide-g
ap oxide glasses such as sodium silicate, sodium germanate, lead silic
ate, silica and germania are reviewed. Experimental spectroscopic data
(optical absorption, as well as luminescence and its excitation) and
luminescence decay kinetics at different temperatures were used to det
ermine localized states in these glasses. The corresponding data for c
rystals of these materials were used for comparison. The spectrum of l
ocalized states is determined by many different types of a short-range
order in the glass structure. In the glasses studied the localized st
ates create an ensemble of structurally non-equivalent anisotropic lum
inescence centers. Their concentration is on the level of 1%. These st
ates disappear after glass crystallization. The structural elements of
localized states are the precursors of radiation-induced defects. In
the case of silica, the optical absorption of the precursor is covered
by the excitonic absorption band. Reducing conditions transform the l
ocalized states into defects.