Ms. Aida et R. Bachiri, THE SURFACE-PROPERTIES OF SPUTTERED AMORPHOUS-SILICON THIN-FILMS, Journal of non-crystalline solids, 189(1-2), 1995, pp. 167-172
An investigation of the surface morphology and microstructure of sputt
ered amorphous silicon films deposited with different rf powers is rep
orted. Both transmission and scanning electron microscopy observations
indicate the presence of a polycrystalline layer at the free surface
of films prepared at high rf power. The surface and bulk dark conducti
vities were determined using the three-contact method. The results con
firm the presence of a polycrystalline layer at the free surface of th
e films. In order to understand the microstructure evolution from the
film-substrate interface to the free surface, a growth model is sugges
ted based on the substrate heating caused by the species from the plas
ma bombardment and the thermal conduction of the substrate.