THE SURFACE-PROPERTIES OF SPUTTERED AMORPHOUS-SILICON THIN-FILMS

An investigation of the surface morphology and microstructure of sputt ered amorphous silicon films deposited with different rf powers is rep orted. Both transmission and scanning electron microscopy observations indicate the presence of a polycrystalline layer at the free surface of films prepared at high rf power. The surface and bulk dark conducti vities were determined using the three-contact method. The results con firm the presence of a polycrystalline layer at the free surface of th e films. In order to understand the microstructure evolution from the film-substrate interface to the free surface, a growth model is sugges ted based on the substrate heating caused by the species from the plas ma bombardment and the thermal conduction of the substrate.