Mj. Caturla et al., RELOCATION CROSS-SECTIONS IN SILICON - THEORETICAL-MODELS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 19-23
In the calculation of atomic mixing processes induced by energetic ion
beams in solids, a key quantity is the relocation cross-section. Very
few analysis of these quantities are available for specific targets,
and even in the relatively simpler collisional stage of cascade evolut
ion uncertainties still exist as to the correctness of available estim
ates. The results of a test case study are reported, where a well defi
ned situation is investigated using two theoretical tools, Molecular D
ynamics and Analytical Theory. The model case refers to bulk relocatio
ns produced in a silicon target by low-energy self recoils. Of special
interest is to find ways to improve the theoretical estimates of relo
cation parameters which may then be used to predict the more complicat
ed fluence dependent evolution of the concentration profile of irradia
ted targets.