RELOCATION CROSS-SECTIONS IN SILICON - THEORETICAL-MODELS

In the calculation of atomic mixing processes induced by energetic ion beams in solids, a key quantity is the relocation cross-section. Very few analysis of these quantities are available for specific targets, and even in the relatively simpler collisional stage of cascade evolut ion uncertainties still exist as to the correctness of available estim ates. The results of a test case study are reported, where a well defi ned situation is investigated using two theoretical tools, Molecular D ynamics and Analytical Theory. The model case refers to bulk relocatio ns produced in a silicon target by low-energy self recoils. Of special interest is to find ways to improve the theoretical estimates of relo cation parameters which may then be used to predict the more complicat ed fluence dependent evolution of the concentration profile of irradia ted targets.