CHALLENGES FOR PREDICTIVE PROCESS SIMULATION IN SUB 0.1 MU-M SILICON DEVICES

Citation
Jd. Plummer et Pb. Griffin, CHALLENGES FOR PREDICTIVE PROCESS SIMULATION IN SUB 0.1 MU-M SILICON DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 160-166
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
102
Issue
1-4
Year of publication
1995
Pages
160 - 166
Database
ISI
SICI code
0168-583X(1995)102:1-4<160:CFPPSI>2.0.ZU;2-9
Abstract
The promise of process simulation has always been that it could replac e costly experiments in the development of new technology. The reality has been far less, primarily because of deficiencies in the physical models underlying such simulations. This situation is changing rapidly however, as better physically based models are developed. This paper describes recent progress in developing physically based process simul ators like SUPREM. A number of examples will be shown which will illus trate the growing predictive power of such TCAD tools, even for silico n structures well beyond current manufacturing practice.