PROCESS SIMULATION CHALLENGES FOR ULSI DEVICES - A USERS PERSPECTIVE

Modeling of ULSI ion implantation processing poses a complex set of ch allenges for efficient description of physical processes. Accuracy req uirements for range and damage profiles and the need for advances in m odeling of defect-enhanced diffusion and dopant activation of Si are r apidly increasing. The overriding requirement is the need to incorpora te accurate physical models into efficient descriptions of 3-dimension al device structures.