Mi. Current et al., PROCESS SIMULATION CHALLENGES FOR ULSI DEVICES - A USERS PERSPECTIVE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 198-201
Modeling of ULSI ion implantation processing poses a complex set of ch
allenges for efficient description of physical processes. Accuracy req
uirements for range and damage profiles and the need for advances in m
odeling of defect-enhanced diffusion and dopant activation of Si are r
apidly increasing. The overriding requirement is the need to incorpora
te accurate physical models into efficient descriptions of 3-dimension
al device structures.