IMPROVED EFFICIENCY IN MONTE-CARLO SIMULATION OF ION-IMPLANTED IMPURITY PROFILES IN SINGLE-CRYSTAL MATERIALS

Authors
YANG SH LIM D MORRIS SJ TASCH AF
Citation
Sh. Yang et al., IMPROVED EFFICIENCY IN MONTE-CARLO SIMULATION OF ION-IMPLANTED IMPURITY PROFILES IN SINGLE-CRYSTAL MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 242-246
Citations number
17
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
102
Issue
1-4
Year of publication
1995
Pages
242 - 246
Database
ISI
SICI code
0168-583X(1995)102:1-4<242:IEIMSO>2.0.ZU;2-7
Abstract
In this paper is reported a new approach with greatly improved efficie ncy for the Monte Carlo simulation of implanted profiles in single-cry stal materials. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time savings of over 200 x has be en observed with a 4-stage simulation yielding a statistically signifi cant distribution over a dynamic range of three orders of magnitude. A simulation of arsenic implants with 15 keV implant energy typically t akes approximately 12 minutes on a workstation.