17.1-PERCENT EFFICIENT CU(IN,GA)SE-2- BASED THIN-FILM SOLAR-CELL

Authors
TUTTLE JR CONTRERAS MA GILLESPIE TJ RAMANATHAN KR TENNANT AL KEANE J GABOR AM NOUFI R
Citation
Jr. Tuttle et al., 17.1-PERCENT EFFICIENT CU(IN,GA)SE-2- BASED THIN-FILM SOLAR-CELL, Progress in photovoltaics, 3(4), 1995, pp. 235-238
Citations number
11
Categorie Soggetti
Energy & Fuels","Physics, Applied
Journal title
Progress in photovoltaics → ACNP
ISSN journal
10627995
Volume
3
Issue
4
Year of publication
1995
Pages
235 - 238
Database
ISI
SICI code
1062-7995(1995)3:4<235:1ECBTS>2.0.ZU;2-E
Abstract
We report a world-record total-area efficiency of 17.1% for a polycrys talline thin-film Cu(In,Ga)Se-2-based photovoltaic solar cell. The inc orporation of Ga to raise the absorber bandgap has been accomplished s uccessfully and in such a manner that an open-circuit voltage of 654 m V and a fill factor of greater than 77% have been achieved. We describ e briefly the deposition process, the device structure, and the device performance characteristics.