AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES

Citation
C. Delerue et al., AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES, Physical review letters, 75(11), 1995, pp. 2228-2231
Citations number
20
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
75
Issue
11
Year of publication
1995
Pages
2228 - 2231
Database
ISI
SICI code
0031-9007(1995)75:11<2228:AACCEI>2.0.ZU;2-M
Abstract
Theoretical and experimental results are presented providing evidence for fast Anger recombination in silicon nanocrystallites. Calculations give nonradiative lifetimes in the 1 ns range. Luminescence experimen ts on porous silicon exhibit a saturation at high excitation power. Th e Anger effect gives a natural explanation for this saturation as well as for the recently observed quenching of the photoluminescence and v oltage tunable electroluminescence. In this last case the importance o f Coulomb charging effects is shown to be at the origin of the linewid th. The consequences of such fast Auger recombination for the optical efficiency of indirect band-gap semiconductor nanocrystallites are dis cussed.