ZnSe films were prepared by the hot wall evaporation technique onto gl
ass, NaCl and KCl substrates at different substrate temperatures durin
g deposition. The effect of deposition parameters on the grain growth,
grain distribution and surface roughness were studied. Information on
their optical properties was also obtained. Strength of grain boundar
y scattering in these films was critically studied and it was observed
that the films are partially depleted of carriers. The density of tra
p states at the grain boundaries decreased for films deposited at high
er substrate temperatures while an increase in carrier concentration w
as observed for films deposited at higher substrate temperatures, The
films deposited at higher deposition temperature contained less stress
than those deposited at lower temperatures.