ZNSE FILMS - PREPARATION AND PROPERTIES

Citation
R. Pal et al., ZNSE FILMS - PREPARATION AND PROPERTIES, Vacuum, 46(11), 1995, pp. 1255-1260
Citations number
37
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
46
Issue
11
Year of publication
1995
Pages
1255 - 1260
Database
ISI
SICI code
0042-207X(1995)46:11<1255:ZF-PAP>2.0.ZU;2-P
Abstract
ZnSe films were prepared by the hot wall evaporation technique onto gl ass, NaCl and KCl substrates at different substrate temperatures durin g deposition. The effect of deposition parameters on the grain growth, grain distribution and surface roughness were studied. Information on their optical properties was also obtained. Strength of grain boundar y scattering in these films was critically studied and it was observed that the films are partially depleted of carriers. The density of tra p states at the grain boundaries decreased for films deposited at high er substrate temperatures while an increase in carrier concentration w as observed for films deposited at higher substrate temperatures, The films deposited at higher deposition temperature contained less stress than those deposited at lower temperatures.