Iv. Grekhov et al., MEASUREMENT OF THE NEAR-THRESHOLD AUGER IONIZATION PROBABILITY IN SILICON, Journal of physics. Condensed matter, 7(35), 1995, pp. 7037-7043
A new method of investigation of the Anger ionization probability, bas
ed on the analysis of the static characteristics of a tunnel MIS emitt
er Auger transistor, is proposed. The main advantages of this method a
re monoenergetic electron injection and very simple energy control. Th
e ionization probability (quantum yield) for silicon was first determi
ned as a function of electron energy E(e) in the near-threshold range.
The Anger effect in Si is noticeable even for E(e) similar or equal t
o 1.2-1.5 eV. The data obtained in the present paper are in good agree
ment with some experimental and theoretical results published for E(e)
> 2 eV.