MEASUREMENT OF THE NEAR-THRESHOLD AUGER IONIZATION PROBABILITY IN SILICON

A new method of investigation of the Anger ionization probability, bas ed on the analysis of the static characteristics of a tunnel MIS emitt er Auger transistor, is proposed. The main advantages of this method a re monoenergetic electron injection and very simple energy control. Th e ionization probability (quantum yield) for silicon was first determi ned as a function of electron energy E(e) in the near-threshold range. The Anger effect in Si is noticeable even for E(e) similar or equal t o 1.2-1.5 eV. The data obtained in the present paper are in good agree ment with some experimental and theoretical results published for E(e) > 2 eV.