INTERSUBBAND OPTICAL-TRANSITION MATRIX-ELEMENTS FOR HOLE STATES IN SEMICONDUCTOR QUANTUM-WELLS

Intersubband optical transition matrix elements between quantized hole states in semiconductor quantum wells, calculated from the 4 x 4 Hami ltonian, are derived, taking into account the position dependence of L uttinger gamma parameters. Furthermore, the transition matrix elements between states obtained within the axial approximation, from the 2 x 2 Hamiltonian, are also derived. Numerical calculations indicate the i mportance of taking the position dependence of Luttinger parameters in to account for bound-free transitions.