INVESTIGATION OF SEMICONDUCTING PARAMETERS OF PB-SN ALLOY OXIDE-ELECTROLYTE INTERFACE BY BUTLER-GARTNER MODEL

Authors
MUKHOPADHYAY I SHARON M
Citation
I. Mukhopadhyay et M. Sharon, INVESTIGATION OF SEMICONDUCTING PARAMETERS OF PB-SN ALLOY OXIDE-ELECTROLYTE INTERFACE BY BUTLER-GARTNER MODEL, Solar energy materials and solar cells, 45(2), 1997, pp. 141-149
Citations number
14
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
45
Issue
2
Year of publication
1997
Pages
141 - 149
Database
ISI
SICI code
0927-0248(1997)45:2<141:IOSPOP>2.0.ZU;2-H
Abstract
The effect of Sn doping on the photoactivity of anodized Pb-Sn alloy e lectrodes is discussed. The Butler-Garmer model has been applied to un derstand the reasons for getting the highest photocurrent with pure le ad oxide and the next highest photocurrent with a Pb-Sn alloy oxide co ntaining 0.1 wt.% Sn. The low photoresponse of Sn doped lead oxide is attributed to creation of a small space charge width (5600 Angstrom) c ompared to the large penetration depth (97,000 Angstrom) of the incide nt light.