A NEW APPROACH TO FABRICATION OF NANOSTRUCTURES

A new approach to the fabrication of model structures for nanoelectron ics with characteristic sizes down to 10 nm is proposed. The approach consists in electron-beam-induced fabrication of self-supporting struc tures of nanometre sizes in a through slit formed in the substrate, fo llowed by the deposition of a required material onto the structure, wh ich serves as an active layer in a nanometre-scale device. Features of the fabrication steps are discussed. Bismuth nanobridges were fabrica ted and their voltage-current characteristics were measured, which dem onstrated features of electron transport in these bridges connected wi th their small sizes and inner structures.