CHARGE-SHEET MODELING OF MOS I-V FUNDAMENTAL NONLINEARITIES IN MOSFET-C CONTINUOUS-TIME FILTERS

Authors
FLANDRE D JESPERS P
Citation
D. Flandre et P. Jespers, CHARGE-SHEET MODELING OF MOS I-V FUNDAMENTAL NONLINEARITIES IN MOSFET-C CONTINUOUS-TIME FILTERS, Electronics Letters, 31(17), 1995, pp. 1419-1420
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
17
Year of publication
1995
Pages
1419 - 1420
Database
ISI
SICI code
0013-5194(1995)31:17<1419:CMOMIF>2.0.ZU;2-5
Abstract
The linearity of the two-MOSFET and four-MOSFET integrators used in MO SFET-C continuous-time filter implementations is compared using the ch arge-sheet model. The results question the widely-accepted superiority of the four-MOSFET structure in terms of higher attenuation of odd-or der harmonic distortions.