1.3-MU-M LARGE SPOT-SIZE LASER-DIODES WITH LATERALLY TAPERED ACTIVE LAYER

Authors
FUKANO H KADOTA Y KONDO Y UEKI M SAKAI Y KASAYA K YOKOYAMA K TOHMORI Y
Citation
H. Fukano et al., 1.3-MU-M LARGE SPOT-SIZE LASER-DIODES WITH LATERALLY TAPERED ACTIVE LAYER, Electronics Letters, 31(17), 1995, pp. 1439-1440
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
17
Year of publication
1995
Pages
1439 - 1440
Database
ISI
SICI code
0013-5194(1995)31:17<1439:1LSLWL>2.0.ZU;2-H
Abstract
1.3 mu m large spot-size laser diodes (LDs) with a laterally tapered a ctive layer have been fabricated with a conventional buried heterostru cture laser process. Fabricated LDs with a cavity lengthh as short as 225 mu m show singlemode-fibre coupling losses of <3dB, threshold curr ents of 4.7 and 18.0 mA, and efficiencies of 0.54 and 0.37W/A al 25 an d 85 degrees C, respectively.