STRONG ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM ERBIUM-DOPED SILICON MONOXIDE

Authors
ROBERTS SW PARKER GJ
Citation
Sw. Roberts et Gj. Parker, STRONG ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM ERBIUM-DOPED SILICON MONOXIDE, Electronics Letters, 31(17), 1995, pp. 1499-1500
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
17
Year of publication
1995
Pages
1499 - 1500
Database
ISI
SICI code
0013-5194(1995)31:17<1499:SRPFES>2.0.ZU;2-9
Abstract
Evaporated films of SiO:Er on silicon substrates are shown to exhibit strong photoiuminescence after annealing at 600 degrees C for 30 min i n argon. With an erbium concentration of similar to 2.7 x 10(20) cm(-3 ), the I-4(13/2) - I-4(15/2) transition is found to decay with two exp onential components.