FREQUENCY CAPABILITY OF STRAINED ALAS INGAAS RESONANT-TUNNELING DIODES/

Authors
MOUNAIX P LHEURETTE E MOLLOT F LIPPENS D
Citation
P. Mounaix et al., FREQUENCY CAPABILITY OF STRAINED ALAS INGAAS RESONANT-TUNNELING DIODES/, Electronics Letters, 31(17), 1995, pp. 1508-1510
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
17
Year of publication
1995
Pages
1508 - 1510
Database
ISI
SICI code
0013-5194(1995)31:17<1508:FCOSAI>2.0.ZU;2-G
Abstract
The frequency capabilities of integrated In0.53Ga0.47As/AlAs resonant tunnelling diodes have been investigated by successfully tracking thei r resistive cutoff frequencies when tile samples are biased in the neg ative differential conductance region. The devices exhibit extremely h igh peak current density (J(p) = 175kAcm(2)) and very low series resis tance (6 x 10(-7)Omega cm(2)) so that submillimetre wave operation can be expected.