HIGH PEAK TUNNEL CURRENT-DENSITY GA0.47IN0.53AS ESAKI DIODES

Authors
COHEN GM RITTER D CYTERMANN C
Citation
Gm. Cohen et al., HIGH PEAK TUNNEL CURRENT-DENSITY GA0.47IN0.53AS ESAKI DIODES, Electronics Letters, 31(17), 1995, pp. 1511-1512
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
17
Year of publication
1995
Pages
1511 - 1512
Database
ISI
SICI code
0013-5194(1995)31:17<1511:HPTCGE>2.0.ZU;2-S
Abstract
High peak current density Ga0.47In0.53As interband tunnel diodes were fabricated by metal organic molecular beam epitaxy. A room temperature peak-to-valley current ratio of 16 and a peak tunnel current density of 9.2kA/cm(2) were obtained in diodes doped to similar to 3 x 10(19)c m(3) on both n-type and p-type sides: A peak-to-valley current ratio o f 3.8, and a peak tunnel current density of 93.2kA/ cm(2) were obtaine d in diodes doped to similar to 10(20) cm(-3) on both n-type- and p-ty pe sides.