INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY/

Authors
WILLEN B ASONEN H TOIVONEN M
Citation
B. Willen et al., INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Electronics Letters, 31(17), 1995, pp. 1514-1515
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
17
Year of publication
1995
Pages
1514 - 1515
Database
ISI
SICI code
0013-5194(1995)31:17<1514:IIHBGB>2.0.ZU;2-W
Abstract
State-of-the-art InGaAs/lnP heterojunction bipolar transistors were gr own by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5 x 5 mu M(2). Together with recent studies, these results demonstrate that the valved cracker technique is a very competitive nontoxic growth me thod.