NUMERICAL SIMULATIONS OF MICROWAVE PLASMA REACTORS FOR DIAMOND CVD

Citation
M. Funer et al., NUMERICAL SIMULATIONS OF MICROWAVE PLASMA REACTORS FOR DIAMOND CVD, Surface & coatings technology, 74-5(1-3), 1995, pp. 221-226
Citations number
8
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
74-5
Issue
1-3
Year of publication
1995
Pages
221 - 226
Database
ISI
SICI code
0257-8972(1995)74-5:1-3<221:NSOMPR>2.0.ZU;2-T
Abstract
A model has been developed simulating electromagnetic fields and plasm a densities of reactors for microwave plasma assisted chemical vapour deposition. Computer programs calculate alternately the electric field for a given spatial distribution of the plasma and the plasma for a g iven distribution of the electric field. This procedure converges towa rds a self-consistent solution of the microwave field-plasma system de scribed by parameters such as collision frequency, electric breakdown and maintenance held strength and an adjustable parameter gamma relati ng electric field strength and plasma density. One key feature of the simulation is the straightforward possibility to model reactors with s patially varying dielectric properties. The calculations are successfu lly applied to simulate (i) a linear plasma system, where the plasma c oaxially surrounds a quartz tube, and (ii) the TM01 mode reactor widel y used in diamond CVD.