THE INFLUENCE OF THE DISTRIBUTION OF POTENTIAL FLUCTUATIONS ON THE DISTRIBUTION OF STATES IN AMORPHOUS-SEMICONDUCTORS

Authors
Citation
Sk. Oleary et Pk. Lim, THE INFLUENCE OF THE DISTRIBUTION OF POTENTIAL FLUCTUATIONS ON THE DISTRIBUTION OF STATES IN AMORPHOUS-SEMICONDUCTORS, Solid state communications, 101(7), 1997, pp. 513-517
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
101
Issue
7
Year of publication
1997
Pages
513 - 517
Database
ISI
SICI code
0038-1098(1997)101:7<513:TIOTDO>2.0.ZU;2-4
Abstract
Using a simplified but representative model for the physical structure of an amorphous semiconductor, we examine the corresponding distribut ion of potential fluctuations. We demonstrate that substantial deviati ons from a Gaussian distribution of potential fluctuations occur for r easonable parameter selections. We then use a semiclassical approach t o study how the distribution of states is shaped by this distribution of potential fluctuations. We find that while the distribution of tail states is relatively heavily influenced by the distribution of potent ial fluctuations, the distribution of band states is not. (C) 1997 Els evier Science Ltd