IONIZATION OF THE ISOELECTRONIC TIN IMPURITY IN THE DILUTE SOLID-SOLUTION PB1-XSNXSE-NA

Authors
ALEKSEEVA GT GURIEVA EA KONSTANTINOV PP MAKSIMOVA NV PROKOFEVA LV
Citation
Gt. Alekseeva et al., IONIZATION OF THE ISOELECTRONIC TIN IMPURITY IN THE DILUTE SOLID-SOLUTION PB1-XSNXSE-NA, Semiconductors, 29(8), 1995, pp. 719-723
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
8
Year of publication
1995
Pages
719 - 723
Database
ISI
SICI code
1063-7826(1995)29:8<719:IOTITI>2.0.ZU;2-S
Abstract
The Hall coefficient, the thermal emf, and the electrical conductivity of dilute Pb1-xSnxSe solid solutions (x=0.005, 0.0075, 0.01, and 0.03 ), doped with sodium (0.1-2.5 at%), were studied in the temperature ra nge 77-600 K. The kinetic coefficients vary in a nonmonotonic way. The behavior depends on the concentration ratio of the isovalent and acce ptor impurities. Quasilocal impurity states in these materials are dis cussed. (C) 1995 American Institute of Physics.