HETEROEPITAXIAL GROWTH OF SIC FILMS ON ALN AL2O3 SUBSTRATES/

Authors
KUZNETSOV AN LEBEDEV AA RASTEGAEVA MG ROGACHEV NA TERUKOV EI SHCHEGLOV MP
Citation
An. Kuznetsov et al., HETEROEPITAXIAL GROWTH OF SIC FILMS ON ALN AL2O3 SUBSTRATES/, Semiconductors, 29(8), 1995, pp. 740-742
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
8
Year of publication
1995
Pages
740 - 742
Database
ISI
SICI code
1063-7826(1995)29:8<740:HGOSFO>2.0.ZU;2-O
Abstract
Films of SiC have been grown on AlN/Al2O3 substrates by reactive magne tron sputtering. The resistivity of the films can be varied over seven orders of magnitude by varying the growth temperature (or the tempera ture of the subsequent annealing). This variation in resistivity sugge sts an amorphous-polycrystalline phase transition of the SiC. (C) 1995 American Institute of Physics.