SEGREGATION OF MERCURY DURING PULSED-LASER ANNEALING OF CDXHG1-XTE

Authors
KUZMA M POTSYASK M SHEREGII E KEMPNIK V FARINA M TSYAKH R
Citation
M. Kuzma et al., SEGREGATION OF MERCURY DURING PULSED-LASER ANNEALING OF CDXHG1-XTE, Semiconductors, 29(8), 1995, pp. 773-775
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
8
Year of publication
1995
Pages
773 - 775
Database
ISI
SICI code
1063-7826(1995)29:8<773:SOMDPA>2.0.ZU;2-J
Abstract
Direct experimental evidence has been obtained that confirms the forma tion of a sharp maximum in the mercury concentration at a small depth (0.2 mu m) below the surface of CdxHg1-xTe (x = 0.2) crystals during p ulsed annealing by the radiation of a YAG:Nd3+ laser. (C) 1995 America n Institute of Physics.