INTERVALLEY MECHANISM FOR THE FORMATION OF S-TYPE NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SHORT HETEROSTRUCTURES

Authors
BELYANTSEV AM ROMANOVA YY
Citation
Am. Belyantsev et Yy. Romanova, INTERVALLEY MECHANISM FOR THE FORMATION OF S-TYPE NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SHORT HETEROSTRUCTURES, Semiconductors, 29(8), 1995, pp. 781-782
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
8
Year of publication
1995
Pages
781 - 782
Database
ISI
SICI code
1063-7826(1995)29:8<781:IMFTFO>2.0.ZU;2-Z
Abstract
The Monte-Carlo method is applied to a study of current transport in a n AlxGa1-xAs-GaAs-AlAs double-barrier heterostructure with a triangula r ''cathode'' barrier. It is shown that at low electron concentrations in the potential well the negative differential conductivity (S-type current-voltage characteristic) is due mainly to intervalley transitio ns. (C) 1995 American Institute of Physics.