We have fabricated YBCO 90 degrees grain boundary junctions on step ed
ges in NdGaO3 and in deposited dielectric (CeO2 on YSZ and SrTiO3 on M
gO) in order to,compare junction performance to our standard, LaAlO3.
Average I(c)R(n) values at 77 K in the 300-400 mu V range were measure
d for 2 mu m step edge junctions on NdGaO3, LaAlO3, and SrTiO3/MgO. Ju
nction I-c is greatly reduced with the CeO2/YSZ system. I(c)R(n) value
s in the 300-400 mu V range were measured at 65 K for 4 mu m junctions
.