Among the concepts for Josephson junctions with artificial barriers, p
lanar junctions are most favorable, because they can be deposited in s
itu. In order to prepare planar junctions, multi-layers were sputtered
, using YBa2Cu3O7-delta as superconductor and PrBa2Cu3O7-delta as barr
ier material. The sandwiches are a-axis oriented. Out of these, single
junctions were etched, planarized with CeO2. Finally gold contacts we
re sputtered. The Junctions are squares of size 20 x 20 to 100 x 100 m
u m(2). A prerequisite for a successful preparation of junctions out o
f a-axis oriented multi-layers is a study of such films. We deposited
the films with RF off-axis sputtering. The films were characterized el
ectrically. Their morphology was investigated by XRD, AFM and TEM. The
films are very smooth and have a grain size of below 100 x 100 nm(2).
To improve T-c and crystal quality, template layers were used. The T-
c of a single film is about 62 K, using a template layer up to 78 K we
re reached. For a-axis oriented growth not only a reduction of the dep
osition temperature is important, but also the growth rate must be hig
h enough. Best results were obtained at rates higher than 150 nm/h. Th
e first planar junctions show a supercurrent, but otherwise rounded I-
V-curves.