EPITAXIAL-GROWTH OF NBN AND NBCXN1-X FILMS ON 3C-SIC FILM-COVERED SI WAFERS

Epitaxial NbN and NbCxN1-x (x<0.3) films were fabricated on 3C-SiC fil m-covered Si wafers. It is that epitaxial films found NbN fabricated o n 3C-SiC/Si substrates have about one degree higher T-c's than those f or epitaxial NbN films fabricated on MgO substrates. T-c and normal-st ate resistivity of fabricated epitaxial NbCxN1-x films depended on the 3C-SiC overlayer thickness of substrates. From results of R-T charact eristic measurements, it is deduced that contact resistance of 3C-SiC and NbN strongly depends on the growth orientation of crystals.