COMBINED PHOTODIODE AND HIGH-TC TRANSITION EDGE BOLOMETER FUNCTION ONZIRCONIA BUFFERED SILICON MEMBRANES

Citation
E. Steinbeiss et al., COMBINED PHOTODIODE AND HIGH-TC TRANSITION EDGE BOLOMETER FUNCTION ONZIRCONIA BUFFERED SILICON MEMBRANES, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2416-2418
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
3
Pages
2416 - 2418
Database
ISI
SICI code
1051-8223(1995)5:2<2416:CPAHTE>2.0.ZU;2-2
Abstract
We report on a novel photoreceiver on silicon membranes, comprising bo th, an efficient photodiode or quantum detector and a transition edge bolometer on the same substrate material, The photodiode action of the device originates from the silicon substrate and delivers a fast opti cal response, with a limited sensitivity range at wavelength <1.1 mu m . The bolometer response, in contrast, is broadband, but rather slow w ith response times in the ms regime. The combination of both detectors thus represents a new optical receiver concept, and should be useful for a broad range of optical applications.