E. Steinbeiss et al., COMBINED PHOTODIODE AND HIGH-TC TRANSITION EDGE BOLOMETER FUNCTION ONZIRCONIA BUFFERED SILICON MEMBRANES, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2416-2418
We report on a novel photoreceiver on silicon membranes, comprising bo
th, an efficient photodiode or quantum detector and a transition edge
bolometer on the same substrate material, The photodiode action of the
device originates from the silicon substrate and delivers a fast opti
cal response, with a limited sensitivity range at wavelength <1.1 mu m
. The bolometer response, in contrast, is broadband, but rather slow w
ith response times in the ms regime. The combination of both detectors
thus represents a new optical receiver concept, and should be useful
for a broad range of optical applications.