REDUCED TEMPERATURE PROCESSING OF YSZ BUFFER LAYERS FOR HTSC TRANSITION EDGE BOLOMETERS

Using the steep change in the resistance at the superconducting transi tion edge a sensitive and spectral broadband membrane type bolometric detector prototype was developed. Response S, noise equivalent power N EP and the time constant tau were examined. Employing inhibit technolo gy and prefabrication of silicon membranes, the developed process sequ ence clearly separates the fabrication into silicon processing technol ogy and commonly explored HTC-superconductor deposition with impact on cost effective future batch fabrication. Buffer layer epitaxy at redu ced deposition temperature improves production yield (membranes!) and a recently developed passivation technique saves process steps. Applyi ng the maximum bias current the bolometer prototypes already reveal de tectivities in excess of 1x10(8) [cm Hz(1/2) W-1] and a time constant of the order of milliseconds.