THERMAL BUDGET SIMULATIONS AND DEVICE PERFORMANCE OF MICROSTRUCTURED HIGH-T-C TRANSITION EDGE BOLOMETERS ON SILICON

Citation
M. Berg et al., THERMAL BUDGET SIMULATIONS AND DEVICE PERFORMANCE OF MICROSTRUCTURED HIGH-T-C TRANSITION EDGE BOLOMETERS ON SILICON, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2435-2438
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
3
Pages
2435 - 2438
Database
ISI
SICI code
1051-8223(1995)5:2<2435:TBSADP>2.0.ZU;2-8
Abstract
Silicon represents the material of choice for fast superconducting hig h quality transition edge bolometers. The performance of these devices sensitively depends on their thermal properties where the heat flux c ritically affects time constant, optical response and noise behavior. In this Work extensive numerical Finite Element-calculations have been performed for various bolometer configurations, using the ABAQUS-code . A high degree of thermal isolation can be established through micros tructuring techniques. The bolometric performance of a prototype devic e is compared with the simulated data. Values of the detectivity D as high as 1x10(10) cm Hz(1/2) W-1 already should be feasible, while a t ime constant in the regime below 10 ms would be retained.