SILICON ION-IMPLANTATION OF YBACUO FILMS FOR BOLOMETER APPLICATION

Silicon ion implantation was used to shift the critical temperature of YBaCuO films continuously to lower temperatures. The variation of T-c and other superconducting properties with ion fluence was investigate d in detail. Based on these results a new bolometer structure was desi gned, fabricated and characterised, The sensor area of the bolometer c onsists of a locally implanted area with a lower critical temperature, while the contact pads and connecting lines retain the original T-c. At the operating temperature the bolometer has a exactly defined tempe rature sensitive area and shows a lower contact resistance. Finally th e feasibility of integrated bolometer arrays is discussed.