HIGH T-C BI-EPITAXIAL JUNCTIONS AND DC-SQUIDS STRUCTURED BY FOCUSED ION-BEAM ETCHING

Authors
IJSSELSTEIJN RPJ HILGENKAMP JWM VELDHUIS D FLOKSTRA J ROGALLA H TRAEHOLT C ZANDBERGEN HW
Citation
Rpj. Ijsselsteijn et al., HIGH T-C BI-EPITAXIAL JUNCTIONS AND DC-SQUIDS STRUCTURED BY FOCUSED ION-BEAM ETCHING, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2513-2516
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on applied superconductivity → ACNP
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
3
Pages
2513 - 2516
Database
ISI
SICI code
1051-8223(1995)5:2<2513:HTBJAD>2.0.ZU;2-2
Abstract
Focused ion beam etching has been used to pattern dc SQUIDs into previ ously characterised template bi-epitaxial grain boundary junctions. Us ing this technique the screening parameter beta(L) can be optimised fo r a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise le vel of 22 mu phi(0) . Hz(-1/2) (1.8 . 10(-29) J . Hz(-1)) has been obt ained at 20 K. Using bias current modulation the 1/f noise could almos t completely be suppressed down to 1 Hz in the entire temperature rang e (10-65 K).