ELECTRICAL CHARACTERIZATION OF NB AL-OXIDE/NB JOSEPHSON-JUNCTIONS WITH HIGH CRITICAL-CURRENT DENSITIES/

Authors
KLEINSASSER AW MALLISON WH MILLER RE ARNOLD GB
Citation
Aw. Kleinsasser et al., ELECTRICAL CHARACTERIZATION OF NB AL-OXIDE/NB JOSEPHSON-JUNCTIONS WITH HIGH CRITICAL-CURRENT DENSITIES/, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2735-2738
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on applied superconductivity → ACNP
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
3
Pages
2735 - 2738
Database
ISI
SICI code
1051-8223(1995)5:2<2735:ECONAJ>2.0.ZU;2-3
Abstract
Transport in Nb/AlOx/Nb junctions involves two parallel channels, barr ier defects (pinholes) with sub-nanometer dimensions and nearly-ideal tunneling regions. We fit junction characteristics using only a single parameter, the ratio of the normal state conductances of these curren t paths. Our barrier model accounts for the excellent Josephson behavi or and highly non-ideal quasiparticle characteristics of junctions wit h critical current densities as high as 4 mA/mu m(2). It appears to be quite generally applicable to tunnel junctions.