MODIFIED DEPOSITION PROCEDURE FOR HIGH-QUALITY YBA2CU3O7-X SRTIO3 BILAYERS/

Authors
TALYANSKY V PETERSEN K DOUGHTY C XI XX VENKATESAN T
Citation
V. Talyansky et al., MODIFIED DEPOSITION PROCEDURE FOR HIGH-QUALITY YBA2CU3O7-X SRTIO3 BILAYERS/, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2869-2871
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on applied superconductivity → ACNP
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
3
Pages
2869 - 2871
Database
ISI
SICI code
1051-8223(1995)5:2<2869:MDPFHY>2.0.ZU;2-N
Abstract
The degradation of an ultrathin YBCO layer under SrTiO3 due to oxygen deficiency poses a fundamental problem in growing a bilayer which may be patterned into a superconducting FET. Annealing between depositions while growing the bilayer can help increase the T-c of the YBCO while retaining acceptable quality of the SrTiO3. This study found T-c in t he range of 60-80 K for a 4 unit-cell thick YBCO film under SrTiO3.