Zw. Dong et al., ELECTRIC-FIELD EFFECT IN SM1-XCAXBA2CU3OY BICRYSTAL JUNCTIONS, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2879-2882
A three terminal device was fabricated by depositing a thin film of Ca
-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring
a gate over the resulting junction. The channel shows RSJ-like Joseph
son junction behavior. By applying a voltage to the gate, a large elec
tric field effect was observed. The largest field effect was observed
in films where 30% of the Sm was replaced by Ca. The critical current
of the junction was modulated 23% by the application of an electric fi
eld of 5x10(5) V/cm. This electric field is about 100 times smaller th
an the electric field necessary for the field effects observed in homo
geneous films. The sign of the field effect is consistent with that ex
pected for a carrier-depleted grain boundary region.