TRANSISTOR PERFORMANCE OF HIGH-T-C 3 TERMINAL DEVICES BASED ON CARRIER CONCENTRATION MODULATION

Electric field effect devices and quasiparticle injection effect devic es are good candidates for the realization of three terminal devices f rom high-T-c materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements.